HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
40. S-80747AL/AL-EB-X, S-80747AN-JB-X (Detection voltage : 4.587 to 4.813 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
4.587 4.700 4.813
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
0.46 0.75
4
±0.59 mV/°C
41. S-80748AL-EC-X, S-80748AN/AN-JC-X (Detection voltage : 4.684 to 4.916 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
4.684 4.800 4.916
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
0.46 0.75
4
±0.60 mV/°C
42. S-80749AL-ED-X, S-80749AN-JD-X (Detection voltage : 4.782 to 5.018 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
4.782 4.900 5.018
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
0.46 0.75
4
±0.61 mV/°C
20
Seiko Instruments Inc.