S-80717AL-AE-X Ver la hoja de datos (PDF) - Seiko Instruments Inc
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S-80717AL-AE-X Datasheet PDF : 42 Pages
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
34. S-80743AL/AL-A7-X, S-80743AN/AN-D7-X (Detection voltage : 4.196 to 4.404 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
4.196 4.300 4.404
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
0.46 0.75
4
±0.54 mV/°C
35. S-80744AL/AL-A8-X, S-80744AN/AN-D8-X, S-80744SN-D8-X (Detection voltage : 4.294 to 4.506 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
4.294 4.400 4.506
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
0.46 0.75
4
±0.55 mV/°C
36. S-80744HL/HL-U8-X (Detection voltage : 4.295 to 4.605 V)
Parameter
Symbol
Conditions
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
-VDET
+VDET
ISS
VDD
IOUT
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Pch
VDS = 0.5 V
VDD = 4.8 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
4.295 4.450 4.605
V
1
4.70
V
1
2.6
6.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
0.36 0.62
4
±0.56 mV/°C
18
Seiko Instruments Inc.
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