S-80721AN-DJ-X Ver la hoja de datos (PDF) - Seiko Instruments Inc
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S-80721AN-DJ-X Datasheet PDF : 42 Pages
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
13. S-80725AH-BN-X (Detection voltage : 2.440 to 2.560 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Pch
VDD = 1.2 V
VDS = 0.5 V
Nch
VDS = 0.5 V
VDD = 4.8 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.440 2.500 2.560
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.4
3.5
µA
2
1.0
15.0
V
1
0.03 0.09
mA
4
4.06 8.36
3
±0.31
mV/°C
14. S-80726AL-AP-X, S-80726AN/AN-DP-X (Detection voltage : 2.537 to 2.663 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.537 2.600 2.663
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
0.36 0.62
4
±0.33
mV/°C
15. S-80727AL/AL-AQ-X, S-80727AN/AN-DQ-X
S-80727SL-AQ-X, S-80727SN-DQ-X (Detection voltage : 2.635 to 2.765 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.635 2.700 2.765
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.0
3.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
0.36 0.62
4
±0.34
mV/°C
Seiko Instruments Inc.
11
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