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PBSS5140T,215 Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
1000
hFE
800
(1)
600
(2)
400
(3)
200
006aab311
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
−1.2
VBE
(V)
−0.8
006aab313
(1)
(2)
(3)
−0.4
−2
IC
(A)
−1.5
IB (mA) = −60
−54
−48
−1
−0.5
006aab312
−42
−36 −30
−24
−18
−12
−6
0
0
−0.4
−0.8
−1.2
−1.6
−2
VCE (V)
Tamb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
−1.3
VBEsat
(V)
−0.9
−0.5
006aab314
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.1
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS5140T_4
Product data sheet
Rev. 04 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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