P2103NVG Ver la hoja de datos (PDF) - Niko Semiconductor
Número de pieza
componentes Descripción
Fabricante
P2103NVG Datasheet PDF : 7 Pages
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NIKO-SEM
N- & P-Channel Enhancement Mode
P2103NVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Gate charge Characteristics
10
8
ID=7A
V DS=15V
6
Source-Drain Diode Forward Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
TJ =150° C
TJ =25° C
1.0E-02
4
1.0E-03
2
1.0E-04
0
0
5
10
15
Qg , Total Gate Charge(nC)
Safe Operating Area
100
Ope ration in This Area
is Lim ited by RDS(ON)
10
↓
1.0E-05
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
100
90
80
SINGLE PULSE
RθJA =62.5˚ C/W
70
TA=25˚ C
100us
60
1
1m s
50
10m s
100m s
0.1 NOTE :
1.VGS= 10V
2.TA=25˚ C
3.RθJA = 62.5˚ C/W
4.Single Pulse
1S
10S
DC
0.01
0.1
1
10
100
VDS, Drain-To-Source Voltage(V)
40
30
20
10
0
0.0001
0.001
0.01
0.1
1
10
Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
1.00E+00
1.00E-01
1.00E-02
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
1.00E-03
single Pluse
1.00E-04
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJA = 62.5 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
1.E+00
1.E+01
1.E+02
REV 1.0
5
Oct-06-2010
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