NX25F011B Ver la hoja de datos (PDF) - Unspecified

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Fabricante

NX25F011B

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

Unspecified 

NX25F011B

NX25F021B

NX25F041B

Erase Block (F4H)

The Erase Block command (F4H) will erase a block of 32

sectors to an “all 1s” state, during this time the array will be

"busy." This command can be used in conjunction with the

Write only to Sector through SRAM command (F2H) to

achieve faster program performance in applications that

can accommodate pre-erase. (see TEO in AC Characteris-

tics for erase and write timing).

Erase

Block

Block

Address*

16

Clocks

1 Transfer Time

SI

F4H

BLK[15:0]

0000H

(tEO)

SO

2

*The Block address only uses bits [8:5], [9:5] or [10:5]

Depending on device density. Lowest four bit [4:0] must be 0h

3

4

5

Write-only to Sector (F2H)

The Write-Only to Sector through SRAM command (F2H)

will write a pre-erased sector in about half the time of the

standard Write to Sector through SRAM command (F3H),

during this time the array will be "busy." This command

can be used in conjunction with the Erase Sector com-

mand (F1H) or Erase Block command (F4H) to achieve

6

7 faster program performance in applications that can

accommodate pre-erase. (see TWO inAC Characteristics

for erase and write timing). Warning: to ensure data integ-

rity this command should only be issued after an erase

command.

8

Write only

to Sector

Command

SI

F2H

Sector

Address*

S[15:0]

Byte

Address**

B[15:0]

Write Sector Data

First Byte - Last Byte

SO

*The sector address only uses bits [8:0], [9:0] or [10:0] Depending on device density

**The byte address only uses bits [8:0]

8 Clocks

00H

Program

Time

(tWP)

9

10

11

12

NexFlash Technologies, Inc.

25

PRELIMINARY NXSF016F-1201

12/12/01 ©

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