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80C251SB16 Ver la hoja de datos (PDF) - Intel

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80C251SB16 Datasheet PDF : 36 Pages
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8XC251SA/SB/SP/SQ HIGH-PERFORMANCE CHMOS MICROCONTROLLER
7.2 Programming and Verification Timing for Nonvolatile Memory
P1, P3
P2
Programming Cycle
Address (16 Bits)
Data In (8 Bits)
TAVGL
TDVGL
TGHGL
TGHDX
TGHAX
Verification Cycle
Address
TAVQV
Data Out
PROG#
TGLGH 1 2 3 4 5 TGHSL
12.75V
EA#/VPP 5V
TSHGL
TEHSH
P0
Mode (8 Bits)
TELQV
TEHQZ
Mode
A4128-01
Figure 21. Timing for Programming and Verification of Nonvolatile Memory
Table 18. Nonvolatile Memory Programming and Verification Characteristics at
TA = 21 – 27 °C, VCC = 5 V, and VSS = 0 V
Symbol
Definition
Min
Max
Units
VPP
IPP
FOSC
TAVGL
TGHAX
TDVGL
TGHDX
TEHSH
TSHGL
TGHSL
TGLGH
Programming Supply Voltage
Programming Supply Current
Oscillator Frequency
Address Setup to PROG# Low
Address Hold after PROG#
Data Setup to PROG# Low
Data Hold after PROG#
ENABLE High to VPP
VPP Setup to PROG# Low
VPP Hold after PROG#
PROG# Width
12.5
4.0
48TOSC
48TOSC
48TOSC
48TOSC
48TOSC
10
10
90
13.5
D.C. Volts
75
mA
6.0
MHz
µs
µs
110
µs
34
PRELIMINARY

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