DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MX26L6420XBC-12 Ver la hoja de datos (PDF) - Macronix International

Número de pieza
componentes Descripción
Fabricante
MX26L6420XBC-12
MCNIX
Macronix International MCNIX
MX26L6420XBC-12 Datasheet PDF : 39 Pages
First Prev 31 32 33 34 35 36 37 38 39
MX26L6420
ERASE AND PROGRAMMING PERFORMANCE(1)
PARAMETER
Chip Erase Time
Word Programming Time
Chip Programming Time
Accelerated Word Program Time
Erase/Program Cycles
MIN.
100
LIMITS
TYP.(2)
150
30
140
7
MAX.
300
350
250
210
UNITS
sec
us
sec
us
Cycles
Note: 1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C,3.3V. Additionally programming typicals assume checkerboard pattern.
LATCHUP CHARACTERISTICS
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
MIN.
-1.0V
-1.0V
-100mA
MAX.
13.5V
Vcc + 1.0V
+100mA
CAPACITANCE TA=0°C to 70°C, VCC=2.7V~3.6V
Parameter Symbol
CIN
COUT
CIN2
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25°C, f=1.0MHz
Test Set
VIN=0
VOUT=0
VIN=0
DATA RETENTION
Parameter
Minimum Pattern Data Retention Time
Test Conditions
150
125
TYP
MAX UNIT
6
7.5
pF
8.5
12
pF
7.5
9
pF
Min
Unit
10
Years
20
Years
P/N:PM0823
REV. 0.5, JAN. 29, 2002
32

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]