MMSF3P02HDR2 Ver la hoja de datos (PDF) - ON Semiconductor
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MMSF3P02HDR2 Datasheet PDF : 8 Pages
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MMSF3P02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
−
−
24
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IDSS
mAdc
−
−
1.0
−
−
10
IGSS
−
−
100
nAdc
VGS(th)
Vdc
1.0
1.5
2.0
−
4.0
−
mV/°C
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
W
−
0.06 0.075
−
0.08 0.095
3.0
7.2
−
mhos
−
1010 1400
pF
−
740
920
−
260
490
−
25
50
ns
−
135
270
−
54
108
−
84
168
−
16
32
−
40
80
−
110
220
−
97
194
−
33
46
nC
−
3.0
−
−
11
−
−
10
−
Vdc
−
1.35 1.75
−
0.96
−
Reverse Recovery Time
See Figure 15
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
−
76
−
ns
ta
−
32
−
tb
−
44
−
Reverse Recovery Stored Charge
QRR
−
0.133
−
mC
3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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