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MAX5079

ORing MOSFET Controller with Ultra-Fast 200ns Turn-Off

Maxim Integrated 

ORing MOSFET Controller with

Ultra-Fast 200ns Turn-Off

ELECTRICAL CHARACTERISTICS (continued)

((VIN = 2.75V to 13.2V and VAUXIN = 0V) or (VIN = 1V and VAUXIN = 2.75V to 13.2V), RSTH = open, RFTH = 0, VUVLO = 1V, VOVI = 0V,

TA = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V and TA = +25°C. See the Typical Operating Circuit.) (Note 1)

PARAMETER

ORing MOSFET CONTROL

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

ORing MOSFET Turn-On Time

tON

CGATE = 10nF, CEXT = 100nF,

MOSFET gate threshold = 2V

10

25

µs

ORing MOSFET Forward Voltage

Threshold (Fast Comparator)

VDTH

(VIN - VBUS) rising

5

12.5

20

mV

ORing MOSFET Reverse Voltage

Turn-Off Threshold (Fast

Comparator (VIN - VBUS))

ORing MOSFET Reverse Voltage

Blanking Time (Fast Comparator)

Slow-Comparator Output Voltage

Threshold on STH

ORing MOSFET Reverse Voltage

Turn-Off Threshold (Slow

Comparator (VIN - VBUS))

(VIN - VBUS) to ISTH

Transconductance (Slow

Comparator)

VFTH

tFBL

VO_STH

VSTH

GM_STH

RFTH = 0

RFTH = 12kΩ

RFTH = 27kΩ, VIN ≥ 3.5V

VBUS = 2.8V, RFTH = 0,

VBUS - VIN = 0.3V

RSTH open

RSTH = 500kΩ

RSTH = 64kΩ

VSTH = 0V

-12

-24

-31

-63

-104 -150

mV

-126 -204 -300

50

ns

0.95

1

1.05

V

-0.1

-12 -24.0

-25

mV

-100

0.17

mS

ORing MOSFET Reverse Voltage

Blanking Time (Slow

Comparator)

STH floating

tSBL

CSTH = 0.047µF

CSTH = 0.22µF

0.5

0.9

1.5

5

ms

14

ORing MOSFET DRIVER

Gate-Charge Current

IGATE

CEXT = 100nF

VGATE ≥ VIN, VIN = 5V, VBUS = 5V

0.7

2

mA

0.9

2

5.0

Gate Discharge Current (Note 3) IGATE.DIS_MIN VGATE ≥ VIN, VIN = 2.75V, VBUS = 3.5V

1.3

A

VGATE ≥ VIN, VIN = 12V, VBUS = 13.2V

3.2

Gate Fall Time

tFGATE

VBUS = 3.5V, CGATE = 0.1µF

VBUS = 3.5V, CGATE = 0.01µF

600

ns

200

Gate Discharge Current Delay

Time (Time from VIN Falling from

3.7V to 3V to VGATE = VIN)

tDIS_GATE

VBUS = 3.5V, VFTH = 0V,

CGATE = 0.1nF

70

200

ns

Gate to IN Resistance

RGATE_IN

(VGATE - VIN) = 100mV

900

Ω

Gate to IN Clamp Voltage

VGATE_IN_CLAMP IGATE = 10mA, VIN ≥ VBUS

8.5

11

V

Gate-Drive Voltage (Measured

with Respect to VIN)

VIN Switchover Threshold to

Higher GATE Voltage (Note 4)

(VGATE - VIN)

2.7V < VIN < 13.2V

VIN = 13.2V

VIN = 2.75V

VIN_SOTH+

3.8

6.5

7

7.6

V

4.5

5

5.5

7.4

8

8.5

V

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