EN29F512 Ver la hoja de datos (PDF) - Eon Silicon Solution Inc.

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EN29F512

512 Kbit (64K x 8-bit) 5V Flash Memory

Eon Silicon Solution Inc. 

EN29F512

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)

Symbol

Parameter

Test Conditions

Min

Max

Unit

ILI

Input Leakage Current

ILO

Output Leakage Current

0V≤ VIN ≤ Vcc

0V≤ VOUT ≤ Vcc

±5

µA

±5

µA

ICC1

Supply Current (read) TTL Byte

CE = VIL; OE = VIH;

f = 6MHz

30

mA

ICC2

ICC3

ICC4

VIL

VIH

VOL

VOH

VID

ILIT

VLKO

Supply Current (Standby) TTL

CE = VIH

1.0

MA

Supply Current (Standby) CMOS

Supply Current (Program or Erase)

CE = Vcc ± 0.3V

Byte program, Sector or Chip

Erase in progress

5.0

µA

30

mA

Input Low Voltage

-0.5

0.8

V

Input High Voltage

2

Vcc +

0.5

V

Output Low Voltage

IOL = 2 mA

0.45

V

Output High Voltage TTL

IOH = -2.5 mA

2.4

V

Output High Voltage CMOS

IOH = -100 µA

Vcc -

0.4V

V

A9 Voltage (Electronic Signature)

10.5

11.5

V

A9 Current (Electronic Signature)

Supply voltage (Erase and

Program lock-out)

A9 = VID

100

µA

3.2

4.2

V

This Data Sheet may be revised by subsequent versions 21 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2003/10/20

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