DTB114EL Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

DTB114EL

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)

Unisonic Technologies 

DTB114E

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATING

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

Output Current

VIN

-40~+10

V

IOUT

-500

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

Output Voltage

VIN(OFF)

VIN(ON)

VOUT(ON)

VCC= -5V, IOUT= -100μA

VOUT= -0.3V, IOUT= -10mA

IOUT/IIN= -50mA/-2.5 mA

Input Current

IIN

VIN= -5V

Output Current

DC Current Gain

IOUT(OFF) VCC= -50V , VIN=0V

hFE VOUT= -5V, IOUT= -50mA

Input Resistance

R1

Resistance Ratio

Transition Frequency

R2/R1

fT

VCE= -10 V, IE=5mA, f=100MHz*

*Transition frequency of the device

MIN TYP MAX UNIT

-0.5

V

-3

-0.1 -0.3

V

-0.88 mA

-0.5 µA

56

7

10

13

kΩ

0.8

1

1.2

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-042,B

Share Link: