BSP315P(1999) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP315P
(Rev.:1999)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 315 P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

VDD = -48 V, ID = -1.17 A

Gate to drain charge

VDD = -48 V, ID = -1.17 A

Gate charge total

VDD = -48 V, ID = -1.17 A, VGS = 0 to -10 V

Gate plateau voltage

VDD = -48 V, ID = -1.17 A

Qgs

-

0.7 1.1 nC

Qgd

-

1.8 2.6

Qg

-

5.2 7.8

V(plateau) -

-3.14

-V

Parameter

Reverse Diode

Inverse diode continuous forward current

TA = 25 °C

Inverse diode direct current,pulsed

TA = 25 °C

Inverse diode forward voltage

VGS = 0 V, IF = -1.17 A

Reverse recovery time

VR = -30 V, IF=IS , diF/dt = 100 A/µs

Reverse recovery charge

VR = -30 V, IF=lS , diF/dt = 100 A/µs

Symbol

Values

Unit

min. typ. max.

IS

-

- -1.17 A

ISM

-

- -4.68

VSD

- -0.97 -1.3 V

trr

- 30.5 46 ns

Qrr

-

36 54 µC

Page 4

1999-09-14

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