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Número de pieza
componentes Descripción
BSP315P(1999) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSP315P
(Rev.:1999)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP315P Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
Preliminary data
BSP 315 P
Power Dissipation
P
tot
=
f
(
T
A
)
BSP 315 P
1.9
W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120
°C
160
T
A
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
1
BSP 315 P
A
t
p
= 280.0
µs
1 ms
-10
0
Drain current
I
D
=
f
(
T
A
)
parameter :
V
GS
≥ −
10V
BSP 315 P
-1.3
A
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0
20 40 60 80 100 120
°C
160
T
A
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
2
BSP 315 P
K/W
10
1
-10
-1
10 ms
10
0
10
-1
single pulse
DC
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-2
-10
-1
-10
0
-10
1
V
-10
2
V
DS
Page 5
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
s
10
4
t
p
1999-09-14
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