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Número de pieza
componentes Descripción
2SK4059TK Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK4059TK
Silicon N Channel Junction Type Field Effect Transistor
Toshiba
2SK4059TK Datasheet PDF : 5 Pages
1
2
3
4
5
I
D
– V
GS
600
VDS
=
2V
Common Source
500
Ta
=
25 °C
400
IDSS=470
μ
A
300
IDSS=250
μ
A
200
100
IDSS=170
μ
A
0
-1.0
-0.8
-0.6
-0.4
-0.2
0
Gate - Source voltage V
GS
(V)
2SK4059TK
I
D
– V
GS
600
VDS
=
2V
Common Source
500
400
Ta=85
℃
300
Ta=25
℃
200
Ta=-40
℃
100
0
-1.0
-0.8
-0.6
-0.4
-0.2
0
Gate - Source voltage V
GS
(V)
|Yfs| – I
DSS
3
2
1
|Yfs|:VDS
=
2V
VGS
=
0V
IDSS: VDS
=
2V
VGS
=
0V
Common Source
Ta
=
25 °C
0
100
200
300
400
500
600
Drain Current I
DSS
(µA)
2.5
Gv:VDD
=
2V
Gv– I
DSS
Cg=5pF
RL= 2.2k
Ω
,
2.0
f=1kHz
vin=100mV
IDSS: VDS
=
2V
1.5
VGS
=
0V
Common Source
Ta
=
25°C
1.0
0.5
0
0
100
200
300
400
500
600
Drain Current I
DSS
(µA)
V
GS(OFF)
– I
DSS
-500
-400
-300
-200
-100
0
0
VGS(OFF):VDS
=
2V
ID
=
1
μ
A
IDSS:VDS
=
2V
VGS
=
0V
Common Source
Ta
=
25 °C
100
200
300
400
500
600
Drain Current I
DSS
(µA)
DGv(V)– I
DSS
-3.0
DGv:VDD
=
2V
→
1.5V
Cg=5pF
-2.5
RL= 2.2k
Ω
,
f=1kHz
vin=100mV
-2.0
IDSS: VDS
=
2V
VGS
=
0V
Common Source
-1.5 Ta
=
25°C
-1.0
-0.5
0
0
100
200
300
400
500
600
Drain Current I
DSS
(µA)
3
2007-11-01
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