STPS20150C Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS20150C Datasheet PDF : 15 Pages
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Characteristics
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
10
9
8
7
6
5
4
3
2
1
0
0
12
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ= 1
T
IF(AV)(A)
δ=tp/T
tp
34
5
6 7 8 9 10 11 12
STPS20150C
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
IF(AV) (A)
12
11
10
9
8
7
6
5
4
T
3
2
1
δ=tp/T
0
0
25
Rth(j-a )=Rth(j-c) (TO-220A B, I 2PAK and D 2PAK)
Rth(j-a)=Rth(j-c) (TO-220F PAB)
Rth(j-a) =15°C/W
tp
50
Tamb (°C)
75
10 0
12 5
15 0
175
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
PARM(t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D²PAK, I²PAK)
Zth(j-c) /Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-0 3
1.E-0 2
tp(s)
T
δ=tp/T
1.E-0 1
tp
1.E+00
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB)
Zth(j-c ) /Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-0 3
1.E-0 2
t p(s)
1.E-0 1
T
δ=tp/T
1.E+0 0
tp
1.E+01
Figure 6: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
Tj=175°C
Tj=150°C
Tj=125°C
Tj=100°C
1E+0
Tj=25°C
VR(V)
1E-1
0
25
50
75
10 0
12 5
150
4/15
DocID7756 Rev 11
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