STPS3L60UF Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS3L60UF Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
STPS3L60
Table 2. Absolute ratings(1)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
TL = 105 °C δ = 0.5
(DO-201AD, SMB)
IF(AV) Average forward current
TL = 72 °C δ = 0.5
(DO-15)
TL = 127 °C δ = 0.5
(SMBflat)
IFSM
PARM
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature(2)
Critical rate of rise reverse voltage
60
V
10
A
3
A
100
2000
-65 to + 150
150
10000
A
W
°C
°C
V/µs
1. limiting values, per diode
2.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth (j-l) Junction to leads
Lead length = 10 mm
SMBflat
SMB
DO-201AD
DO-15
10
20
°C/W
20
35
2/11
Doc ID 7505 Rev 6
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