STPS1545G-TR Ver la hoja de datos (PDF) - STMicroelectronics
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STPS1545G-TR Datasheet PDF : 13 Pages
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Characteristics
STPS1545
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
45
IF(RMS) Forward rms current
30
IF(AV)
Average forward current
δ = 0.5, square wave
TO-220AC,
D2PAK
TC = 155 °C
15
TO-220FPAC TC = 130 °C
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
220
PARM
Tstg
Tj
Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C
Storage temperature range
Maximum operating junction temperature (1)
430
-65 to +175
175
Unit
V
A
A
A
W
°C
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c) Junction to case
Table 3: Thermal parameters
Parameter
TO-220AC, D2PAK
TO-220FPAC
Max. value
1.6
4.0
Unit
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Tj = 25 °C
-
IR(1) Reverse leakage current
VR = VRRM
Tj = 125 °C
-
Tj = 125 °C IF = 15 A
-
VF(1) Forward voltage drop
Tj = 25 °C
-
IF = 30 A
Tj = 125 °C
-
Typ.
11
0.5
0.65
Max.
200
40
0.57
0.84
0.72
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.42 x IF(AV) + 0.01 x IF2(RMS)
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