K9F2G08B0B Ver la hoja de datos (PDF) - Samsung

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componentes Descripción

Fabricante

K9F2G08B0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)

Preliminary

FLASH MEMORY

CE

RE

I/Ox

R/B

tRC

tRP

tREH

tREA

tCEA

tRR

tREA

tRLOH

Dout

tCHZ

tCOH

tRHZ

tRHOH

Dout

NOTES : Transition is measured at ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

tRLOH is valid when frequency is higher than 33MHz.

tRHOH starts to be valid when frequency is lower than 33MHz.

Status Read Cycle

CLE

CE

WE

RE

I/Ox

tCLS

tCS

tCLH

tCLR

tCH

tWP

tWHR

tCEA

tCHZ

tCOH

tDS tDH

70h/F1h

tIR

tREA

tRHZ

tRHOH

Status Output

Samsung Confidential

19

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