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WM8501(2006) Ver la hoja de datos (PDF) - Wolfson Microelectronics plc

Número de pieza
componentes Descripción
Fabricante
WM8501
(Rev.:2006)
Wolfson
Wolfson Microelectronics plc Wolfson
WM8501 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Pre-Production
WM8501
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are stress ratings only. Permanent damage to the device may be caused by continuously operating at
or beyond these limits. Device functional operating limits and guaranteed performance specifications are given under Electrical
Characteristics at the test conditions specified.
ESD Sensitive Device. This device is manufactured on a CMOS process. It is therefore generically susceptible
to damage from excessive static voltages. Proper ESD precautions must be taken during handling and storage
of this device.
Wolfson tests its package types according to IPC/JEDEC J-STD-020B for Moisture Sensitivity to determine acceptable storage
conditions prior to surface mount assembly. These levels are:
MSL1 = unlimited floor life at <30°C / 85% Relative Humidity. Not normally stored in moisture barrier bag.
MSL2 = out of bag storage for 1 year at <30°C / 60% Relative Humidity. Supplied in moisture barrier bag.
MSL3 = out of bag storage for 168 hours at <30°C / 60% Relative Humidity. Supplied in moisture barrier bag.
The Moisture Sensitivity Level for each package type is specified in Ordering Information.
CONDITION
Analogue supply voltage
Digital supply voltage
Voltage range digital inputs
Master clock frequency
Operating temperature range, TA
Storage temperature prior to soldering
Storage temperature after soldering
MIN
MAX
-0.3V
+7V
-0.3V
+7V
DGND -0.3V
DVDD +0.3V
38.462MHz
-25°C
+85°C
30°C max / 85% RH max
-65°C
+150°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Digital supply range
DVDD
2.7
3.6
Analogue supply range
AVDD
4.5
5.5
Ground
AGND, DGND
0
Difference DGND to AGND
-0.3
0
+0.3
Note: Digital supply DVDD must never be more than 0.3V greater than AVDD for normal operation of the device.
UNIT
V
V
V
V
w
PP Rev 3.1 May 2006
5

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