MDP13N50
N-Channel MOSFET 500V, 13.0A, 0.5Ω
General Description
The MDP13N50 uses advanced Magnachip’s
MOSFET Technology, which provides low on-
state resistance, high switching performance
and excellent quality.
MDP13N50 is suitable device for SMPS, HID
and general purpose applications.
Features
VDS = 500V
ID = 13.0A @VGS = 10V
RDS(ON) < 0.5Ω @VGS = 10V
Applications
Power Supply
HID
Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov 2009. Version 2.0
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
550
±30
13
8.2
52
187
1.49
4.5
580
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
0.67
Unit
oC/W
1
MagnaChip Semiconductor Ltd.