PBSS2515E,115 Ver la hoja de datos (PDF) - Philips Electronics
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PBSS2515E,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
800
hFE
(1)
600
(2)
400
(3)
200
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0
10−1
1
10
102
103
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1
VCEsat
(mV)
10−1
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10−2
(1)
(2)
(3)
10−3
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
1100
VBE
(mV)
900
(1)
700
(2)
500
(3)
300
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100
10−1
1
10
102
103
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Base-emitter voltage as a function of collector
current; typical values
1
VCEsat
(mV)
10−1
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(1)
(2)
10−2
(3)
10−3
10−1
1
10
102
103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14877
Product data sheet
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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