MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET Power Amplifier
Designed for 7.5 volt UHF power amplifier applications in industrial and
commercial equipment primarily for hand portable radios.
• Specified 7.5 Volt Characteristics:
RF Input Power: 1 mW (0 dBm)
RF Output Power: 7 W
Minimum Gain (Vcont = 7 V): 38.5 dB
Harmonics: – 35 dBc Max @ 2 fo
• Provides Wideband Performance
• Meets European Transient Specification (ETS 300 113)
• Epoxy Glass PCB Construction Gives Consistent Performance
and Reliability
• 50 Ω Input/Output Impedances
• Guaranteed Stability and Ruggedness
Order this document
by MHW2707A/D
MHW2707A1
7W
400–470 MHz
UHF POWER AMPLIFIER
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating
DC Supply Voltage (Pins 2, 4, 5)
DC Control Voltage (Pin 3)
RF Input Power
RF Output Power (VDD1, 2, 3 = 9 V)
Operating Case Temperature Range
Storage Temperature Range
CASE 301AL–01, STYLE 1
Symbol
Value
Unit
VDD1, 2, 3
9
Vdc
Vcont
7
Vdc
Pin
2
mW
Pout
9
W
TC
– 30 to +80
°C
Tstg
– 30 to +80
°C
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MHW2707A1
1