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BUS98-D

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

BUS98 BUS98A

The Safe Operating Area figures shown in Figures 12 and 13 are

specified for these devices under the test conditions shown.

30

20

10

5

2

1

0.5

0.2 TC = 25°C

0.1

DC

LIMIT

ONLY FOR

TURN ON

1 ms

tr = 0.7 µs

0.05

BUS98

BUS98A

0.02

2

5 10 20 50 100 200 500 1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 13. Forward Bias Safe Operating Area

100

80

60

BUS98

BUS98A

40

20 VBE(off) = 5 V

TC = 100°C

IC/IB1 ≥ 5

0

200

400

600

800

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 14. Reverse Bias Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on TC = 25_C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC w 25_C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 13 may be found at

any case temperature by using the appropriate curve on

Figure 15.

TJ(pk) may be calculated from the data in Figure 11. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during

reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 14 gives RBSOA characteristics.

100

80

60

40

20

0

0

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

40

80

120

160

200

TC, CASE TEMPERATURE (°C)

Figure 15. Power Derating

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