NTE472 Ver la hoja de datos (PDF) - NTE Electronics

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componentes Descripción

Fabricante

NTE472

Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Dynamic Characteristics

hFE VCE = 5V, IC = 50mA

20 – 150

Output Capacitance

Functional Test

Cob VCB = 12V, IE = 0, f = 1MHz

– – 15 pF

Common–Emitter Amplifier Power Gain

Collector Efficiency

GPE POUT = 1.75W, VCC = 12.5V,

η

f = 175MHz

11.5 –

50 –

– dB

–%

.260

(6.6)

Max

.500

(12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter

45°

.018 (0.45) Dia

Base

Collector/Case

.031 (.793)

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