MMBD301 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

MMBD301

Schottky Barrier Diode

Fairchild Semiconductor 

PACKAGE

SOT-23

TO-236AB (Low)

MMBD301

3

4T

1

2

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

CONNECTION DIAGRAM

3

1

2 NC

PACKAGE

SOT-23

TO236AB

Schottky Barrier Diode

Sourced from Process GD

Absolute Maximum Ratings* TA = 25OC unless otherwise noted

Sym

Parameter

Value

Tstg

Storage Temperature

TJ

Operating Junction Temperature

Wiv

Working Inverse Voltage

PF

Forward Power Dissipation @ TA = 25OC

Derate above 25OC

-55 to +150

-55 to +125

25

200

2.0

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

Units

OC

OC

V

mW

Mw/OC

Electrical Characteristics TA = 25OC unless otherwise noted

SYM

CHARACTERISTICS

BV Breakdown Voltage

IR Reverse Leakage

VF Forward Voltage

CT Capacitance

MIN MAX UNITS

TEST CONDITIONS

30

200

450

600

1.5

V

IR = 10 uA

nA VR = 25 V

mV IF = 1.0 mA

mV IF = 10 mA

pF VR = 15 V

f = 1.0 MHz

© 1997 Fairchild Semiconductor Corporation

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