MSK3013 Ver la hoja de datos (PDF) - M.S. Kennedy
Número de pieza
componentes Descripción
Fabricante
MSK3013 Datasheet PDF : 5 Pages
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ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
Drain to Source Voltage . . .55V MAX TJ
Drain to Gate Voltage
TST
(RGS=1MΩ). . . . . . . . . 55V MAX TC
Gate to Source Voltage
TLD
(Continuous).. . . . . . . ±20V MAX
Continuous Current . . . . . 25A MAX
Pulsed Current . . . . . . . 49A MAX
Thermal Resistance
(Junction to Case).. . . . . 0.3°C/W
Junction Temperature. . . . . . . . . . . +175°C MAX
Storage Temperature. . . . . . . . .-55°C TO +150°C
Case Operating Temperature Range . .-55°C TO 125°C
Lead Temperature Range
(10 Seconds) . . . . . . . . . . . . . . . .300°C MAX
ELECTRICAL SPECIFICATIONS
Parameter
Test Conditions 4
MSK 3013
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
VGS = 0 ID = 0.25 mA
55
-
-
V
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
VDS = 55V VGS = 0V
VGS = ±20V VDS = 0
VDS = VGS ID = 250 µA
-
-
25
µA
-
-
±100
nA
2
-
4
V
Drain-Source on Resistance 2
VGS = 10V ID = 25A
-
0.033
0.040
Ω
Drain-Source on Resistance 3
Forward Transconductance 1
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time 1
Turn-Off Delay Time 1
Fall Time 1
Input Capacitance 1
Output Capacitance 1
VGS = 10V ID = 25A
VDS = 25V ID = 25A
ID = 25A
VDS = 28V
VGS = 10V
VDD = 28V
ID = 25A
Ω
RG = 12
RD = 1.1
VGS = 0V
VDS = 25V
-
-
0.022
Ω
17
-
-
S
-
-
65
nC
-
-
12
nC
-
-
27
nC
-
7.3
-
nS
-
69
-
nS
-
47
-
nS
-
60
-
nS
-
1300
-
pF
-
410
-
pF
Reverse Transfer Capacitance 1
f = 1 MHz
-
150
-
pF
BODY DIODE
Forward on Voltage 1
IS = 25A VGS = 0V
-
1.3
1.75
V
Reverse Recovery Time 1
IS = 25A di/dt = 100A/µS
-
65
98
nS
Reverse Recovery Charge 1
IS = 25A di/dt = 100A/µS
-
160
240
µC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of
actual
device performance but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA=25°C unless otherwise specified. Parameters apply to each transistor in the module.
2
Rev. B 7/00
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