4N35GV Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
4N35GV Datasheet PDF : 9 Pages
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4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
10000
1000
VCE=10V
IF=0
100
10
0
0
40
80
120
96 11700
Tamb – Ambient Temperature (
Figure 6.
Total
Powe°Cr
)
Dissipation
vs.
Ambient Temperature
1
0 10 20 30 40 50 60 70 80 90 100
96 11875
Tamb – Ambient Temperature ( °C
)
Figure 9. Collector Dark Current vs.
Ambient Temperature
1000.0
100.0
10.0
1.0
1.000
VCB=10V
0.100
0.010
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF – Forward Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
1.5
1.4 VCE=10V
1.3 IF=10mA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11874
Tamb – Ambient Temperature ( °C
)
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
0.001
1
10
100
96 11876
IF – Forward Current ( mA )
Figure 10. Collector Base Current vs. Forward Current
100.00
10.00
VCE=10V
1.00
0.10
0.01
0.1
1.0
10.0
100.0
96 11904
IF – Forward Current ( mA )
Figure 11. Collector Current vs. Forward Current
Rev. A4, 11–Jan–99
91
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