PMBT3904D Ver la hoja de datos (PDF) - Philips Electronics
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PMBT3904D Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching double transistor
Product specification
PMBT3904D
500
handbook, halfpage
hFE
400
(1)
300
(2)
200
(3)
100
MCD785
0
10−1
1
10
102
103
IC (mA)
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
0.5
handbook, halfpage
VCEsat
(V)
0.4
MCD788
0.3
0.2
0.1
0
10−1
1
(1)
(3) (2)
10
102
103
IC (mA)
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1
handbook, halfpage
VBE
(V)
(1)
0.8
(2)
0.6
(3)
0.4
MCD786
0.2
0
10−1
1
10
102
103
IC (mA)
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
1999 Dec 15
handboo1k,0h0alfpage
IC
(mA)
80
60
40
20
MCD787
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
2
4
6
(1) IB = 500 µA.
(2) IB = 450 µA.
(3) IB = 400 µA.
(4) IB = 350 µA.
(5) IB = 300 µA.
(6) IB = 250 µA.
(7) IB = 200 µA.
(8) IB = 150 µA.
8
10
VCE (V)
(9) IB = 100 µA.
(10) IB = 50 µA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
5
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