JC546 Ver la hoja de datos (PDF) - Philips Electronics
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componentes Descripción
Fabricante
JC546 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
JC546; JC547; JC548
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
0.25
UNIT
K/mW
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
JC547A
JC546B; JC547B; JC548B
DC current gain
JC547A
JC546B; JC547B; JC548B
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V;
see Figs 2 and 3
IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
−
−
110
200
−
−
−
−
580
−
−
−
100
−
TYP.
−
−
−
90
150
180
290
90
200
700
900
660
−
2.5
11.5
−
2
MAX.
15
5
100
−
−
220
450
250
600
−
−
700
770
−
−
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 27
3
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