N0301N-T1-AT - N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - Renesas Hoja de datos

DESCRIPTION
The N0301N is a switching device which can be driven directly by a 4.0 V power source.
The N0301N features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES
• 4.0 V drive available
• Low on-state resistance
   RDS(on)1 = 36 mΩ MAX. (VGS = 10 V, ID = 2.25 A)
   RDS(on)2 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.25 A)
   RDS(on)3 = 130 mΩ MAX. (VGS = 4.0 V, ID = 2.25 A)
• Built-in gate protection diode