P/N + Descripción + Búsqueda de contenido
Número de pieza(s) : RF-0505D RF-0505DH RF-0505S RF-0505SH RF-0509D RF-0509DH RF-0509S RF-0509SH RF-0512D RF-0512DH
RECOM Electronic GmbH
componentes Descripción : ECONOLINE - DC/DC-Converter RF Series, 1.25 Watt, DIP8 (Single & Dual Output)
Número de pieza(s) : 2SC5369 C5369
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
Número de pieza(s) : C3355 2SC3355-T 2SC3355
Renesas Electronics
componentes Descripción : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Número de pieza(s) : 2SC3604 C3604
New Jersey Semiconductor
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Número de pieza(s) : C3603 2SC3603
eleflow technologies co., ltd.
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Número de pieza(s) : 2SC3603 C3603
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Número de pieza(s) : 2SC5408 2SC5408-T1 C5408-T1 C5408
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Número de pieza(s) : C3604 2SC3604
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Número de pieza(s) : 2SC5409 2SC5409-T1 C5409 C5409-T1
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Número de pieza(s) : NE699M01 NE699M01-T1
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Número de pieza(s) : NE698M01 NE698M01-T1
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Número de pieza(s) : C3587 2SC3587
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Número de pieza(s) : 2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A C5606 C5606-T1
Renesas Electronics
componentes Descripción : NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION
Número de pieza(s) : 2SC5433 2SC5433-T1 C5433-T1 C5433
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Número de pieza(s) : 2SC5437 2SC5437-T1 C5437 C5437-T1
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Número de pieza(s) : NESG2101M05 NESG2101M05-A NESG2101M05-T1 NESG2101M05-T1-A
Renesas Electronics
componentes Descripción : NPN SiGe RF TRANSISTOR FOR Medium Output Power AMPLIFICATION
Número de pieza(s) : 2SC4957 2SC4957-T1 NE68539 C4957-T1
California Eastern Laboratories.
componentes Descripción : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
Número de pieza(s) : 2SC4093 2SC4093-T1 C4093 C4093-T1
Renesas Electronics
componentes Descripción : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
Número de pieza(s) : C3663-T2B C3663-T1B C3663 2SC3663-T2B 2SC3663 2SC3663-T1B
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Número de pieza(s) : C5434 2SC5434 2SC5434-T1 C5434-T1
NEC => Renesas Technology
componentes Descripción : NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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