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Número de pieza(s) : HY57V561620 HY57V561620LT HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620LT-P HY57V561620LT-S HY57V561620T HY57V561620T-8 HY57V561620T-H
Hynix Semiconductor
componentes Descripción : 4Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V561620C HY57V561620CL-I HY57V561620CLT-6I HY57V561620CLT-8I HY57V561620CLT-HI HY57V561620CLT-I HY57V561620CLT-KI HY57V561620CLT-PI HY57V561620CLT-SI HY57V561620CT-6I
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V561620B-I HY57V561620BLT-6I HY57V561620BLT-8I HY57V561620BLT-HI HY57V561620BLT-I HY57V561620BLT-KI HY57V561620BLT-PI HY57V561620BLT-SI HY57V561620BT-6I HY57V561620BT-8I
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V561620B HY57V561620BL/ST-6 HY57V561620BL/ST-7 HY57V561620BL/ST-8 HY57V561620BL/ST-H HY57V561620BL/ST-K HY57V561620BL/ST-P HY57V561620BL/ST-S HY57V561620BLT HY57V561620BLT-6
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V561620CLT HY57V561620CLTP HY57V561620CT HY57V561620CTP HY57V561620CLT-6 HY57V561620CLT-7 HY57V561620CLT-K HY57V561620CLT-H HY57V561620CLT-8 HY57V561620CLT-P
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : AD484M1644VTA-15 AD484M1644VTA-10LI AD484M1644VTA-10L AD484M1644VTA AD484M1644VTA-10I AD484M1644VTA-55 AD484M1644VTA-6 AD484M1644VTA-7 AD484M1644VTA-7I AD484M1644VTA-7L
Unspecified
componentes Descripción : 64Mb( 4Banks ) Synchronous DRAM
Número de pieza(s) : T4312816A T4312816A-6S T4312816A-7S T4312816A-7.5S T4312816A-8S T4312816A-10S
Taiwan Memory Technology
componentes Descripción : 8M x 16 SDRAM 2M x 16Bit x 4Banks Synchronous DRAM
Número de pieza(s) : T4312816B T4312816B-6S T4312816B-6SG T4312816B-7S T4312816B-7SG
Taiwan Memory Technology
componentes Descripción : 8M x 16 SDRAM 2M x 16Bit x 4Banks Synchronous DRAM
Número de pieza(s) : T4312816A T4312816A-6S T4312816A-7S T4312816A-7.5S T4312816A-8S T4312816A-10S
Taiwan Memory Technology
componentes Descripción : 8M x 16 SDRAM 2M x 16Bit x 4Banks Synchronous DRAM
Número de pieza(s) : K4S561632A K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80 K4S561632A-TC
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S561632B K4S561632B-TC/L1H K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S561632C K4S561632C-L1H K4S561632C-L1L K4S561632C-L60 K4S561632C-L75 K4S561632C-L7C K4S561632C-TC K4S561632C-TC/L1H K4S561632C-TC/L1L K4S561632C-TC/L60
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S561632D K4S561632D-TC/L1H K4S561632D-TC/L75 K4S561632D-TCL1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC75000 K4S561632D-TC/L7C K4S561632D-TC
Samsung
componentes Descripción : 256Mbit SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : M12L16161A M12L16161A(2Q) M12L16161A-5TIG2Q M12L16161A-7TIG2Q
Unspecified
componentes Descripción : 512K x 16Bit x 2Banks Synchronous DRAM
Número de pieza(s) : T431616C T431616C-6S T431616C-6SG T431616C-7S T431616C-7SG
Taiwan Memory Technology
componentes Descripción : 512K x 16Bit x 2Banks Synchronous DRAM
Número de pieza(s) : M12L16161A M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG
[Elite Semiconductor Memory Technology Inc.
componentes Descripción : 512K x 16Bit x 2Banks Synchronous DRAM
Número de pieza(s) : IS42S32400E IS45S32400E IS45S32400E-6TLA1 IS45S32400E-6BLA1 IS45S32400E-7TLA1 IS45S32400E-7BLA1 IS45S32400E-7BA1 IS45S32400E-6BLA2 IS45S32400E-7TLA2 IS45S32400E-7BLA2
Integrated Silicon Solution
componentes Descripción : 4M x 32 128Mb Synchronous DRAM
Número de pieza(s) : IS42RM IS42RM16400K IS42RM16400K-6BLI IS42RM16400K-75BLI IS42SM IS42SM16400K IS42SM16400K-6BLI IS42SM16400K-75BLI IS42VM16400K IS42VM16400K-6BLI
Integrated Silicon Solution
componentes Descripción : 1M x 16Bits x 4Banks Mobile Synchronous DRAM
Número de pieza(s) : HY57V641620HG HY57V641620HGLT-5 HY57V641620HGLT-5/55/6/7 HY57V641620HGLT-55 HY57V641620HGLT-6 HY57V641620HGLT-7 HY57V641620HGLT-8 HY57V641620HGLT-H HY57V641620HGLT-K HY57V641620HGLT-P
Hynix Semiconductor
componentes Descripción : 4 Banks x 1M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V121620 HY57V121620LT HY57V121620T HY57V121620T-6 HY57V121620T-K HY57V121620T-H HY57V121620T-8 HY57V121620T-P HY57V121620T-S HY57V121620LT-6
Hynix Semiconductor
componentes Descripción : 4 Banks x 8M x 16Bit Synchronous DRAM
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