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Número de pieza(s) : HY57V658020B HY57V658020BLT HY57V658020BLTC HY57V658020BLTC-10 HY57V658020BLTC-10P HY57V658020BLTC-10S HY57V658020BLTC-75 HY57V658020BLTC-8 HY57V658020BTC HY57V658020BTC-10
Hynix Semiconductor
componentes Descripción : 4 Banks x 2M x 8Bit Synchronous DRAM
Número de pieza(s) : K4S640832C-TC K4S640832C K4S640832C-TC/L70 K4S640832C-TC/L80 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L10
Samsung
componentes Descripción : 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S640832F K4S640832F-TC/L75 K4S640832F-TC75 K4S640832F-TL75
Samsung
componentes Descripción : 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S640832D-TC/L80 K4S640832D-TC K4S640832D-TC/L75 K4S640832D-TC/L1L K4S640832D-TC/L1H K4S640832D-TC/L10 K4S640832D
Samsung
componentes Descripción : 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S640832E K4S640832E-TC/L1H K4S640832E-TC/L1L K4S640832E-TC/L75 K4S640832E-TC75 K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TL75 K4S640832E-TL1H K4S640832E-TL1L
Samsung
componentes Descripción : 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HY57V56820CLT HY57V56820CT HY57V56820CT-6 HY57V56820CT-K HY57V56820CT-H HY57V56820CT-8 HY57V56820CT-P HY57V56820CT-S HY57V56820CLT-6 HY57V56820CLT-K
Hynix Semiconductor
componentes Descripción : 4 Banks x 8M x 8Bit Synchronous DRAM
Número de pieza(s) : VDS7616A4A-55 VDS7616A4A-6 VDS7616A4A-7 VDS7616A4A
A-Data Technology
componentes Descripción : Synchronous DRAM 2M x 16 Bit x 4 Banks
Número de pieza(s) : ADS7616A4A ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7
A-Data Technology
componentes Descripción : Synchronous DRAM 2M x 16 Bit x 4 Banks
Número de pieza(s) : M12L128168A M12L128168A-5TIG M12L128168A-5BIG M12L128168A-6TIG M12L128168A-6BIG M12L128168A-7TIG M12L128168A-7BIG
[Elite Semiconductor Memory Technology Inc.
componentes Descripción : 2M x 16 Bit x 4 Banks Synchronous DRAM
Número de pieza(s) : VDS7616A4A-55 VDS7616A4A-6 VDS7616A4A-7
Unspecified
componentes Descripción : Synchronous DRAM - 2M x 16 Bit x 4 Banks
Número de pieza(s) : K4S160822D K4S160822DT K4S160822DT-G K4S160822DT-G/F7 K4S160822DT-G/F8 K4S160822DT-G/FH K4S160822DT-G/FL K4S160822DT-G/F10
Samsung
componentes Descripción : 2Mx8 SDRAM 1M x 8Bit x 2 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832D K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC75 K4S560832D-TC7A K4S560832D-TC7C
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832A K4S560832A-TC K4S560832A-TC/L75 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S560832B K4S560832B-TC K4S560832B-TC/L75 K4S560832B-TC/L1H K4S560832B-TC/L1L
Samsung
componentes Descripción : 256Mbit SDRAM 8M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : K4S643232C V62C5181024LL-70P K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC70 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL55 K4S643232C-TL60
Samsung
componentes Descripción : 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HY57V561620B-I HY57V561620BLT-6I HY57V561620BLT-8I HY57V561620BLT-HI HY57V561620BLT-I HY57V561620BLT-KI HY57V561620BLT-PI HY57V561620BLT-SI HY57V561620BT-6I HY57V561620BT-8I
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V651620B HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75 HY57V651620BTC-8 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-10 HY57V651620BLTC-55
Hynix Semiconductor
componentes Descripción : 4 Banks x 1M x 16Bit Synchronous DRAM
Número de pieza(s) : HY57V561620B HY57V561620BL/ST-6 HY57V561620BL/ST-7 HY57V561620BL/ST-8 HY57V561620BL/ST-H HY57V561620BL/ST-K HY57V561620BL/ST-P HY57V561620BL/ST-S HY57V561620BLT HY57V561620BLT-6
Hynix Semiconductor
componentes Descripción : 4 Banks x 4M x 16Bit Synchronous DRAM
Número de pieza(s) : NTE-DRAM
NTE Electronics
componentes Descripción : MICROPROCESSOR & MEMORY CIRCUITS
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