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Número de pieza(s) : IXZR16N60 IXZR16N60A IXZR16N60B
IXYS CORPORATION
componentes Descripción : NCHANNEL ENHANCEMENT MODE RF MOSFET
Número de pieza(s) : ZVNL120G ZVNL120GTA ZVNL120GTC
Diodes Incorporated.
componentes Descripción : 200V N-CHANNEL ENHANCEMENT MODE MOSFET
Número de pieza(s) : BLF8G22LS-200V BLF8G22LS-200GV
NXP Semiconductors.
componentes Descripción : Power LDMOS transistor
Número de pieza(s) : BLF8G20LS-200V
Ampleon
componentes Descripción : Power LDMOS transistor
Número de pieza(s) : BLF8G22LS-200V BLF8G22LS-200GV
Ampleon
componentes Descripción : Power LDMOS transistor
Número de pieza(s) : BLF8G20LS-200V
NXP Semiconductors.
componentes Descripción : Power LDMOS transistor
Número de pieza(s) : GS88237BB-250V GS88237BB-200V GS88237BB-250IV GS88237BB-200IV GS88237BD-250V GS88237BD-200V GS88237BD-250IV GS88237BD-200IV GS88237BGB-250V GS88237BGB-200V
Giga Semiconductor
componentes Descripción : 256K x 36 9Mb SCD/DCD Sync Burst SRAM
Número de pieza(s) : GS88118B-XXXV GS88118BD-150IV GS88118BD-150V GS88118BD-200IV GS88118BD-200V GS88118BD-250IV GS88118BD-250V GS88118BD-XXXV GS88118BGD-150IV GS88118BGD-150V
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Número de pieza(s) : GS881E18BD-150IV GS881E18BD-150V GS881E18BD-200IV GS881E18BD-200V GS881E18BD-250IV GS881E18BD-250V GS881E18BGD-150IV GS881E18BGD-150V GS881E18BGD-200IV GS881E18BGD-200V
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Número de pieza(s) : ZVN2120G ZVN2120GTA ZVN2120GTC
Diodes Incorporated.
componentes Descripción : 200V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223
Número de pieza(s) : GS880Z18BGT-150V GS880Z18BGT-200V GS880Z18BGT-250V GS880Z18BT-150IV GS880Z18BT-150V GS880Z18BT-200IV GS880Z18BT-200V GS880Z18BT-250IV GS880Z18BT-250V GS880Z32BGT-150V
Giga Semiconductor
componentes Descripción : 9Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS882Z18BGD-150IV GS882Z18BGD-150V GS882Z18BGD-200IV GS882Z18BGD-250IV GS882Z36BB-200V GS882Z36BGD-150IV GS882Z36BGD-150V GS882Z36BGD-200IV GS882Z36BGD-200V GS882Z36BGD-250IV
Giga Semiconductor
componentes Descripción : 9Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS880E18BGT-150V GS880E18BGT-200IV GS880E18BGT-200V GS880E18BGT-250IV GS880E18BGT-250V GS880E18BT-150IV GS880E18BT-150V GS880E18BT-200IV GS880E18BT-200V GS880E18BT-250IV
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Número de pieza(s) : GS88037BT-XXXV GS88037BT-250V GS88037BT-200V GS88037BT-250IV GS88037BT-200IV GS88037BGT-250V GS88037BGT-200V GS88037BGT-250IV GS88037BGT-200IV
Giga Semiconductor
componentes Descripción : 256K x 36 9Mb Sync Burst SRAM
Número de pieza(s) : GS881Z18BD-150IV GS881Z18BD-150V GS881Z18BD-200IV GS881Z18BD-200V GS881Z18BD-250IV GS881Z18BD-250V GS881Z18BGD-150V GS881Z18BGD-200V GS881Z18BGD-250V GS881Z18BGT-150IV
Giga Semiconductor
componentes Descripción : 9Mb Pipelined and Flow Through Synchronous NBT SRAM
Número de pieza(s) : GS816218BB-150IV GS816218BB-150V GS816218BB-200IV GS816218BB-200V GS816218BB-250IV GS816218BB-250V GS816218BGB-150IV GS816218BGB-150V GS816218BGB-200IV GS816218BGB-200V
Giga Semiconductor
componentes Descripción : 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
Número de pieza(s) : BS107P BS107PSTZ
Diodes Incorporated.
componentes Descripción : 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET
Número de pieza(s) : BS107P BS107PSTZ
Diodes Incorporated.
componentes Descripción : 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET (Rev - 2019)
Número de pieza(s) : GS88218BB-150IV GS88218BB-150V GS88218BB-200IV GS88218BB-200V GS88218BB-250IV GS88218BB-250V GS88218BB-V GS88218BD-150IV GS88218BD-150V GS88218BD-200IV
Giga Semiconductor
componentes Descripción : 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
Número de pieza(s) : GS816018BGT-150IV GS816018BGT-150V GS816018BGT-200IV GS816018BGT-200V GS816018BGT-250IV GS816018BGT-250V GS816018BT-150IV GS816018BT-150V GS816018BT-200IV GS816018BT-200V
Giga Semiconductor
componentes Descripción : 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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