INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP054
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 54A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Forward On-Voltage
IS= 90A; VGS= 0
Gfs
Forward Transconductance
VDS= 25V;ID=54A
MIN MAX UNIT
60
V
2
4
V
0.014
Ω
±100
nA
25
μA
2.5
V
25
S
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