2SD1275, 2SD1275A
50
40
(1)
30
20
PC Ta
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(PC=2W)
IC VCE
5
TC=25˚C
4
IB=2.0mA
1.8mA
1.6mA
3
1.4mA
1.2mA
1.0mA
0.8mA
2
0.6mA
0.4mA
IC VBE
10
VCE=4V
8
25˚C
TC=100˚C –25˚C
6
4
(2)
10
(3)
(4)
0
0
40
80
120
160
Ambient temperature Ta (°C)
0.2mA
1
0
0123456
Collector-emitter voltage VCE (V)
2
0
0
0.8
1.6
2.4
3.2
Base-emitter voltage VBE (V)
e/ pe) VCE(sat) IC
c ty 100
e. d IC/IB=250
an edcyclestaisgcontinue 10
n uroduct lidfetyped, d 1 TC=–25˚C
te tin urP tinue 100˚C
ing fo iscon 0.1
25˚C
hFE IC
105
VCE=4V
104
TC=100˚C
103 25˚C
–25˚C
102
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
in ndes foll,opwlaned d 0.01
a o clu pe 0.01
0.1
1
10
c d in e ty Collector current IC (A)
10
0.01
0.1
1
10
Collector current IC (A)
1
0.1
1
10
100
Collector-base voltage VCB (V)
M is/Discontimnuaeintenanc Safe operation area
ce pe, 100
Non repetitive pulse
103
D an ty TC=25˚C
inten nce 102
a na 10
M inte ICP
t=10ms
ma 10
t=1ms
d IC
ne 1
DC
(pla 1
Rth t
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
(1)
(2)
0.1
10−1
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
10−2
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
2
SJD00189BED