Characteristics
Emitter (IR GaAs)
Symbol
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
VF
IR
C0
RTHJL
Collector-Emitter Leakage Current
ICEO
Capacitance
CCE
Thermal Resistance, Junction to Lead
RTHJL
Package Transfer Characteristics (Each Channel)
Saturated Current Transfer Ratio, ILD/Q3-1
Saturated Current Transfer Ratio, ILD/Q3-2
Common Mode Rejection Output High
CTR SAT
CTR SAT
CMH
Min.
—
—
—
—
—
—
—
300
100
—
Typ.
1.25
0.01
25
750
Max. Unit
1.65 V
10
µA
—
pF
—
K/W
5.0
70
nA
6.8
—
pF
500
—
K/W
—
—
—
—
5000 —
%
%
V/ µ s
Common Mode Rejection Output Low
CML
—
5000 —
V/ µ s
Common Mode Coupling Capacitance
Package Capacitance
CCM
—
0.01 —
pF
CIO
—
0.8
—
pF
Test Condition
IF=60 mA
VR=6.0 V
VR=0 V, f=1.0 MHz
—
VCE=15 V
VCE=5.0 V, f=1.0 MHz
—
IF=1.6 mA, VCE=0.4 V
IF=1.0 mA, VCE=0.4 V
VCM=50 VP-P, RL=10 kΩ,
IF=0 mA
VCM=50 VP-P, RL=10 kΩ,
IF=0 mA
—
VIO=0 V, f=1.0 MHz
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
2
ILD/Q3
March 8, 2000-01