HM62W8511CJP10 Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción

Fabricante

HM62W8511CJP10

4M High Speed SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62W8511HC Series

Low VCC Data Retention Characteristics

(Ta = 0 to +70°C)

This characteristics is guaranteed only for L-version.

Parameter

Symbol Min Typ*1 Max Unit Test conditions

VCC for data retention

VDR

Data retention current I

CCDR

Chip deselect to data

tCDR

retention time

2.0

—

—

V

VCC ≥ CS ≥ VCC – 0.2 V

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

—

300

600

µA

V

CC

=

3

V,

V

CC

≥

CS

≥

V

CC

–

0.2

V

(1) 0 V ≤ Vin ≤ 0.2 V or

(2)

V

CC

≥

Vin

≥

V

CC

–

0.2

V

0

—

—

ns See retention waveform

Operation recovery time t

R

5

—

—

ms

Note: 1. Typical values are at VCC = 3.0 V, Ta = +25°C, and not guaranteed.

Low VCC Data Retention Timing Waveform

t CDR

Data retention mode

tR

VCC

3.0 V

VDR

2.0 V

0V

VCC ≥ ≥ VCC – 0.2 V

Rev. 2, Nov. 2001, page 12 of 14

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