INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU932
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·Automotive ignition applications
·Inverters circuits for motor controls
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current
15
A
ICM
Collector Current-peak
30
A
IB
Base Current
1
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
5
A
150
W
200
℃
Tstg
Storage Temperature Range
-40~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W
isc website:www.iscsemi.cn
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