PNP Silicon RF Transistor
For low distortion broadband amplifier in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20 mA
to 80 mA
BFP 194
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP 194
RKs
1 = C 2 = E 3 = B 4 = E SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 77 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
Unit
15
V
20
20
3
100
mA
10
700
mW
150
°C
-65 ... 150
-65 ... 150
105
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
1
Oct-12-1999