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Número de pieza
componentes Descripción
BCY59(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BCY59
(Rev.:2012)
SILICON PLANAR EPITAXIAL TRANSISTORS
Comset Semiconductors
BCY59 Datasheet PDF : 4 Pages
1
2
3
4
NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
f
T
Transition
frequency
I
C
=10 mA, V
CE
=5 V
f = 100MHz
BCY59
BCY58
150
-
- MHz
F
Noise figure ,
RS=2k
Ω
I
C
=200 µA, V
CE
=5 V
f = 1kHz, B =200Hz
BCY59
BCY58
-
2
6
db
t
d
Delay time
BCY59
BCY58
-
35
-
t
r
Rise time
BCY59
BCY58
-
50
-
t
on
t
s
Turn on time
Storage time
I
C
=10 mA , I
B
=1 mA
-I
BM
=1 mA, V
BB
=3.6 V
R1= R2 = 5k
Ω
R
L
= 990
Ω
BCY59
BCY58
BCY59
BCY58
-
-
85 150
ns
400 -
t
f
Fall time
BCY59
BCY58
-
80
-
t
off
Turn off time
BCY59
BCY58
-
480 800
t
d
Delay time
BCY59
BCY58
-
5
-
t
r
Rise time
BCY59
BCY58
-
50
-
t
on
t
s
Turn on time
Storage time
I
C
=100 mA , I
B
=10 mA
-I
BM
=10 mA, V
BB
=5 V
R1 = 500
Ω ,
R1 = 700
Ω
R
L
= 990
Ω
BCY59
BCY58
BCY59
BCY58
-
-
55 150
ns
250 -
t
f
Fall time
BCY59
BCY58
-
200
-
t
off
Turn off time
BCY59
BCY58
-
450 800
C
C
Collector
capacitance
I
E
= I
e
= 0 ,V
CB
=10 V
f = 1MHz
BCY59
BCY58
-
-
5
pF
C
E
Emitter capacitance
I
C
= I
c
= 0 ,V
EB
=0.5 V
f = 1MHz
BCY59
BCY58
-
-
15 pF
18/10/2012
COMSET SEMICONDUCTORS
3/4
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