Philips Semiconductors
30° and 70° angle sensor hybrids
Preliminary specification
KM110BH/2430;
KM110BH/2470
CHARACTERISTICS
Tamb = 25 °C; VCC = 5 V; RL = 1.7 kΩ and a homogeneous magnetic field Hext = 100 kA/m in the sensitive layer of the
KMZ sensor, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
α
angle range:
note 1
KM110BH/2430
KM110BH/2470
VO
output voltage range:
KM110BH/2430
linear; see Fig.4
KM110BH/2470
sinusoidal; see Fig.5
Vzero
Voff
zero point voltage
zero point offset voltage:
KM110BH/2430
α = 0°
related to sinusoidal sensor
characteristic; see Fig.5
KM110BH/2470
αoff
zero point offset angle related to hybrid edges;
see Fig.7
S
sensitivity:
α = 0°; note 2
KM110BH/2430
KM110BH/2470
P
precision:
−20 to +100 °C
KM110BH/2430
KM110BH/2470
FL
deviation of linearity:
note 3
KM110BH/2430
KM110BH/2470
Rp
reproducibility
Rs
resolution
FH
hysteresis
α = 0°; note 4
α = 0°; note 5
α = 0°; note 6
SPmax
maximum angular speed:
KM110BH/2430
KM110BH/2470
RL
load resistance
CL
load capacitance
Temperature coefficients (−40 to +100 °C)
TCVzero temperature coefficient
of zero point voltage:
KM110BH/2430
KM110BH/2470
TCS
temperature coefficient
of sensitivity
−20 to 100 °C
MIN.
TYP.
MAX. UNIT
−
−15 to +15 −
deg
−
−35 to +35 −
deg
−
0.5 to 4.5 −
V
−
0.5 to 4.5 −
V
−
2.5
−
V
−
±25
−
±15
−
1
−
mV
−
mV
3
deg
137
140
73
74.5
−
0.2
0.5
−
±1
−
−
−
<0.001
−
<0.001
−
<0.05
−
60
−
150
1.7
−
−
−
143
mV/deg
76
mV/deg
0.5
deg
1.2
deg
−
%⋅FS
−
%⋅FS
−
deg
−
deg
−
deg
−
deg/ms
−
deg/ms
−
kΩ
10
nF
−
0.2
0.6
mV/K
−
0.1
0.3
mV/K
−
100 × 10−6 −
K−1
1996 Nov 08
4