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Número de pieza
componentes Descripción
MTP10N10E Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MTP10N10E
Power MOSFET 10 Amps, 100 Volts
ON Semiconductor
MTP10N10E Datasheet PDF : 8 Pages
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MTP10N10E
RGS
DUT
30
25
20
15
dIs/dt
≤
400 A/
µ
s
10
5
-
VR
+
VGS
IFM
IS
Li
+
VDS
20 V
-
VR = 80% OF RATED VDS
VdsL = Vf + Li
⋅
dls/dt
Figure 13. Commutating Safe Operating Area
Test Circuit
0
0
20
40
60
80
100
120
VDS, DRAINĆTOĆSOURCE VOLTAGE (VOLTS)
Figure 12. Commutating Safe Operating Area (CSOA)
V(BR)DSS
Vds(t)
IO
L
VDS
C
ID
4700
µ
F
250 V
VDD
t
RGS
50
Ω
Figure 14. Unclamped Inductive Switching
Test Circuit
ID(t)
VDD
tP
t, (TIME)
ǒ Ǔ
ǒ Ǔ
WDSRĂ
+
Ă
12Ă
LĂIO2 Ă
V(BR)DSS
V(BR)DSSĂćĂVDD
Figure 15. Unclamped Inductive Switching
Waveforms
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