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Número de pieza
componentes Descripción
MJD44H11-I Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJD44H11-I
NPN Epitaxial Silicon Transistor
Fairchild Semiconductor
MJD44H11-I Datasheet PDF : 4 Pages
1
2
3
4
Typical Characteristics
1000
100
V = 1V
CE
10
1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 3. Power Derating
100
I
CP
(max)
10
I (max)
C
1
DC
5ms1m
5
s
00
µ
1s00
µ
s
0.1
0.01
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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