DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HN58X25128TI Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
HN58X25128TI Datasheet PDF : 27 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HN58X25128I/HN58X25256I
(Ta = −40 to +85°C, VCC = 2.5 V to 5.5 V)
Parameter
Symbol Alt
Min
Max
Clock frequency
fC
fSCK
—
5
S active setup time
tSLCH
tCSS1
90
—
S not active setup time
tSHCH
tCSS2
90
—
S deselect time
tSHSL
tCS
90
—
S active hold time
tCHSH
tCSH
90
—
S not active hold time
tCHSL
—
90
—
Clock high time
tCH
tCLH
90
—
Clock low time
tCL
tCLL
90
—
Clock rise time
tCLCH
tRC
—
1
Clock fall time
tCHCL
tFC
—
1
Data in setup time
tDVCH
tDSU
20
—
Data in hold time
tCHDX
tDH
30
—
Clock low hold time after HOLD not tHHCH
—
70
—
active
Clock low hold time after HOLD active tHLCH
—
40
—
Clock high setup time before HOLD tCHHL
—
60
—
active
Clock high setup time before HOLD tCHHH
—
60
—
not active
Output disable time
tSHQZ
tDIS
—
100
Clock low to output valid
tCLQV
tV
—
70
Output hold time
tCLQX
tHO
0
—
Output rise time
tQLQH
tRO
—
50
Output fall time
tQHQL
tFO
—
50
HOLD high to output low-Z
tHHQX
tLZ
—
50
HOLD low to output low-Z
tHLQZ
tHZ
—
100
Write time
tW
tWC
—
5
Notes: 1. tCH + tCL ≥ 1/fC
2. Value guaranteed by characterization, not 100% tested in production.
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Notes
1
1
2
2
2
2
2
2
2
Rev.1.00, Jun.20.2003, page 8 of 27

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]