VS-MURB2020CTTRLP Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

VS-MURB2020CTTRLP

Ultrafast Rectifier, 2 x 10 A FRED Pt®

Vishay Semiconductors 

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

www.vishay.com

Vishay Semiconductors

Ultrafast Rectifier, 2 x 10 A FRED Pt®

TO-263AB (D2PAK)

Base

common

cathode

2

TO-262AA

Base

common

cathode

2

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

12

3

Anode

Anode

1 Common 2

cathode

VS-MURB2020CTPbF

12

3

Anode

Anode

1 Common 2

cathode

VS-MURB2020CT-1PbF

PRODUCT SUMMARY

Package

TO-263AB (D2PAK), TO-262AA

IF(AV)

VR

VF at IF

trr

TJ max.

Diode variation

2 x 10 A

200 V

0.85 V

35 ns

175 °C

Common cathode

DESCRIPTION / APPLICATIONS

MUR.. series are the state of the art ultrafast recovery

rectifiers specifically designed with optimized performance

of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time

control, guarantee the best overall performance,

ruggedness and reliability characteristics.

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.















ABSOLUTE MAXIMUM RATINGS

PARAMETER

Peak repetitive reverse voltage

Average rectified forward current

per leg

total device

Non-repetitive peak surge current per leg

Peak repetitive forward current per leg

Operating junction and storage temperatures

SYMBOL

VRRM

IF(AV)

IFSM

IFM

TJ, TStg

TEST CONDITIONS

Rated VR, TC = 145 °C

Rated VR, square wave, 20 kHz, TC = 145 °C

MAX.

200

10

20

100

20

-65 to +175

UNITS

V

A

°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

Breakdown voltage,

blocking voltage

Forward voltage

Reverse leakage current

Junction capacitance

Series inductance

VBR,

VR

VF

IR

CT

LS

IR = 100 μA

200

IF = 8 A, TJ = 125 °C

-

IF = 16 A

-

IF = 16 A, TJ = 125 °C

-

VR = VR rated

-

TJ = 150 °C, VR = VR rated

-

VR = 200 V

-

Measured lead to lead 5 mm from package body

-

TYP.

-

-

-

-

-

-

55

8.0

MAX.

-

0.85

1.15

1.05

15

250

-

-

UNITS

V

μA

pF

nH

Revision: 10-Jul-15

1

Document Number: 94083

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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