IRFP3703 Ver la hoja de datos (PDF) - International Rectifier
Nรบmero de pieza
componentes Descripciรณn
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IRFP3703 Datasheet PDF : 8 Pages
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IRFP3703
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient โโโ
RDS(on)
โโโ
Static Drain-to-Source On-Resistance โโโ
VGS(th)
Gate Threshold Voltage
2.0
โโโ
IDSS
Drain-to-Source Leakage Current
โโโ
IGSS
Gate-to-Source Forward Leakage
โโโ
Gate-to-Source Reverse Leakage
โโโ
โโโ โโโ
0.028 โโโ
2.3 2.8
2.8 3.9
โโโ 4.0
โโโ 20
โโโ 250
โโโ 200
โโโ -200
V VGS = 0V, ID = 250ยตA
V/ยฐC Reference to 25ยฐC, ID = 1mA
mโฆ VGS = 10V, ID = 76A ย
VGS = 7.0V, ID = 76A ย
V VDS = VGS, ID = 250ยตA
ยตA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150ยฐC
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 โโโ โโโ S VDS = 24V, ID = 76A
Qg
Total Gate Charge
โโโ 209 โโโ
ID = 76A
Qgs
Gate-to-Source Charge
โโโ 62 โโโ nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
โโโ 42 โโโ
VGS = 10V, ย
td(on)
Turn-On Delay Time
โโโ 18 โโโ
VDD = 15V, VGS = 10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
โโโ 123 โโโ ns ID = 76A
โโโ 53 โโโ
RG = 1.8โฆ
โโโ 24 โโโ
VGS = 10V ย
Ciss
Input Capacitance
โโโ 8250 โโโ
VGS = 0V
Coss
Output Capacitance
โโโ 3000 โโโ
VDS = 25V
Crss
Reverse Transfer Capacitance
โโโ 290 โโโ pF ฦ = 1.0MHz
Coss
Output Capacitance
โโโ 10360 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
โโโ 3060 โโโ
โโโ 2590 โโโ
VGS = 0V, VDS = 24V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 24V ย
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Typ.
โโโ
โโโ
โโโ
Max.
1700
76
23
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
โโโ
โโโ
โโโ
โโโ
โโโ
Typ. Max. Units
โโโ 210ย
A
โโโ 1000
0.8 1.3 V
80 120 ns
185 275 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25ยฐC, IS = 76A, VGS = 0V ย
TJ = 25ยฐC, IF = 76A, VDS = 16V
di/dt = 100A/ยตs ย
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