IRF7451
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.19 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mA ย
โโโ โโโ 0.09 โฆ VGS = 10V, ID = 2.2A ย
3.0 โโโ 5.5 V VDS = VGS, ID = 250ยตA
โโโ โโโ 25
โโโ โโโ 250
ยตA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 100 nA VGS = 30V
โโโ โโโ -100
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
3.5 โโโ โโโ
Qg
Total Gate Charge
โโโ 28 41
Qgs
Gate-to-Source Charge
โโโ 6.8 10
Qgd
Gate-to-Drain ("Miller") Charge
โโโ 13 20
td(on)
Turn-On Delay Time
โโโ 10 โโโ
tr
Rise Time
โโโ 4.2 โโโ
td(off)
Turn-Off Delay Time
โโโ 17 โโโ
tf
Fall Time
โโโ 15 โโโ
Ciss
Input Capacitance
โโโ 990 โโโ
Coss
Output Capacitance
โโโ 220 โโโ
Crss
Reverse Transfer Capacitance
โโโ 42 โโโ
Coss
Output Capacitance
โโโ 1260 โโโ
Coss
Output Capacitance
โโโ 100 โโโ
Coss eff. Effective Output Capacitance
โโโ 180 โโโ
Units
S
nC
ns
pF
Conditions
VDS = 25V, ID = 2.2A
ID = 2.2A
VDS = 120V
VGS = 10V ย
VDD = 75V
ID = 2.2A
RG = 6.5โฆ
VGS = 10V ย
VGS = 0V
VDS = 25V
ฦ = 1.0MHz
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 120V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ย
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
Typ.
โโโ
โโโ
Max.
210
3.6
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 2.3
A showing the
integral reverse
G
โโโ โโโ 29
p-n junction diode.
S
โโโ โโโ 1.3
โโโ 76 110
โโโ 270 400
V TJ = 25ยฐC, IS = 2.2A, VGS = 0V ย
ns TJ = 25ยฐC, IF = 2.2A
nC di/dt = 100A/ยตs ย
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