2SJ217 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SJ217

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

Drain to Source Saturation Voltage VDS (on) (V)

Static Drain to Source on State Resistance

RDS (on) (Ω)

Forward Transfer Admittance yfs (nS)

Static Drain to Source on State Resistance

RDS (on) (Ω)

Share Link: